PART |
Description |
Maker |
2N2535N5 2N2535N3 2N2540N3 2N2540N5 2N2540N8 DN253 |
350V N-channel depletion - Mode vertical DMOS FET 400V N-channel depletion - Mode vertical DMOS FET N-Channel Depletion-Mode Vertical DMOS FETs
|
Supertex Inc
|
IRF637 IRFP256 IRFP257 IRFP242R IRF230R IRFP240R I |
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 23A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 21A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 400MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 18A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 8A条(丁)|04AA TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 8A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 5A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 33A I(D) | TO-247 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|3A条(丁)|47 TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 22A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 275V五(巴西)直| 22A条(丁)|04AA
|
ECM Electronics, Ltd. Fairchild Semiconductor, Corp.
|
BF994SA BF994SB BF994S BF994 |
From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
RFH12N40 RFH12N35 |
12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs 12 A, 350 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC 12A/ 350V and 400V/ 0.380 Ohm/ N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
SD5501 SD5501N XSD5501 |
N-Channel Depletion-Mode 4-Channel DMOS FET Array
|
Calogic LLC CALOGIC[Calogic LLC] CALOGIC[Calogic, LLC]
|
DN2530N8-G DN2530N3-G |
N-Channel Depletion-Mode Vertical DMOS FETs 200 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
|
Supertex, Inc.
|
IRF340-343 IRF341 IRF342 IRF343 IRF741 IRF742 MTM8 |
N-Channel Power MOSFETs/ 10A/ 350V/400V N-Channel Power MOSFETs, 10A, 350V/400V
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
CPC5602 |
N Channel Depletion Mode FET
|
Clare, Inc.
|
MMBFJ175LT1G MMBFJ175LT1G09 MMBFJ175LT1G11 |
JFET Chopper P - Channel - Depletion
|
ON Semiconductor
|